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參數資料
型號: 1N6626
廠商: SENSITRON SEMICONDUCTOR
元件分類: 整流器
英文描述: 2.3 A, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數: 1/3頁
文件大小: 44K
代理商: 1N6626
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Addre1N - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5077, REV. B
Ultrafast Recovery Rectifier
Hermetic, non-cavity glass package
Metallurgically bonded
Operating and Storage Temperature: -65oC to +175o
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
SJ
SX
SV
1N6626,U,US thru 1N6631,U,US
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1N6626, U, US
1N6627, U ,US
1N6628, U, US
1N6629, U, US
1N6630 ,U, US
1N6631, U, US
VRWM
200
400
600
800
900
1000
Volts
AVERAGE RECTIFIED FORWARD CURRENT
1N6626 thru 1N6628
1N6629 thru 1N6631
Io
TL= 75
oC
2.3
1.8
Amps
AVERAGE RECTIFIED FORWARD CURRENT
1N6626U, US thru 1N6628U, US
1N6629U, US thru 1N6631U, US
Io
TEC= 110
oC
4.0
2.8
Amps
PEAK FORWARD SURGE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IFSM
Tp=8.3ms
75
60
A(pk)
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IR @ VRWM
Tj = 25
oC
2.0
4.0
μAmps
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IR @ VRWM
Tj = 150
oC
500
600
μAmps
MAX. PEAK FORWARD VOLTAGE (PULSED)
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
VFM
IF=4A
IF=3A
IF=2A
1.50
1.70
1.95
Volts
PEAK RECOVERY CURRENT
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
IRM
IF=2A,
100A/
μ
3.5
4.2
5.0
A(pk)
MAXIMUM REVERSE RECOVERY TIME
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
Trr
IF=0.5A
IRM =1.0A
30
50
60
ns
FORWARD RECOVERY VOLTAGE
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
VFRM
IF=1A
tr=12ns
8
12
20
Volts
THERMAL RESISTANCE (Axial)
1N6626 thru 1N6631
R
θ
JL
L=.375
22
oC/W
THERMAL RESISTANCE (MELF)
1N6626U, US thru 1N6631U, US
R
θ
JC
L=0
6.5
oC/W
相關PDF資料
PDF描述
1N6627V 2 A, SILICON, RECTIFIER DIODE
1N6627X 2 A, SILICON, RECTIFIER DIODE
1N6627 2.3 A, SILICON, RECTIFIER DIODE
1N6629X 1.4 A, SILICON, RECTIFIER DIODE
1N6630V 1.4 A, SILICON, RECTIFIER DIODE
相關代理商/技術參數
參數描述
1N6626_04 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
1N6626_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
1N6626D3A 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER
1N6626D3B 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER
1N6626U 制造商:SENSITRON 制造商全稱:Sensitron 功能描述:Ultrafast Recovery Rectifier
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