- 您現在的位置：買賣IC網 > PDF目錄364364 > 1N6641US (MICROSEMI CORP-LAWRENCE) 300 mAmp 75-100 Volts 4 nsec Computer Switching Diode PDF資料下載
參數資料
| 型號： | 1N6641US |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 300 mAmp 75-100 Volts 4 nsec Computer Switching Diode |
| 中文描述： | 0.3 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5D, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 1N6641US |
V F
@
I F
TYPES
VdC
mA
MIN
MAX
(PULSED)
1N6639US
–
1.20
500
0.54
0.62
1
1N6640US
0.76
0.86
50
0.82
0.92
100
0.87
1.00
200
1N6641US
–
1.10
200
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
V BRR
@ 10 μA
V RWM
I R1
I R2
T FR
IF
= 200 mA
T RR
CT
TYPES
@ TA= +25
°C
@ TA= +150
°C
VR=
V RWM
I R = 10 mA
I F = 10 mA
RL= 100
VR= 0
VR=
V RWM
V(pk)
V(pk)
nA dc
μA dc
ns
ns
pF
1N6639US
1N6640US
1N6641US
100
75
75
75
50
50
100
100
100
100
100
100
10
10
10
4.0
4.0
5.0
2.5
2.5
3.0
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM
= 2.5A, Pw= 8.3ms
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
FORWARD VOLTAGE:
1N6639US THRU 1N6641US AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/609
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6639US
1N6640US
1N6641US
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/609
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
50 C/W maximum at L = 0
THERMAL IMPEDANCE: (
ZOJX): 25
C/W maximum
POLARITY:
Cathode end is banded
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
1.78
0.48
4.19
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
DIM
D
F
G
S
2.16
0.71
4.95
FIGURE 1
相關PDF資料 |
PDF描述 |
|---|---|
| 1N6642U | SWITCHING DIODES |
| 1N6642US | SWITCHING DIODES |
| 1N6643U | SWITCHING DIODES |
| 1N6643US | SWITCHING DIODES |
| 1N6642U | SWITCHING DIODES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N6642 | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 0.3A 2-Pin Case D 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE D LAW - Bulk |
| 1N6642578E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SIGNAL OR COMPUTER DIODE |
| 1N6642CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SWITCHING DIODE IN A CERAMIC SURFACE MOUNT |
| 1N6642D1A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| 1N6642D2A | 制造商:TT Electronics/ Semelab 功能描述:DIODE HI-REL 100V 0.3A DLCC2 制造商:TT Electronics/ Semelab 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2 制造商:SEMELAB 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2; Diode Type:Switching; Forward Current If(AV):100mA; Repetitive Reverse Voltage Vrrm Max:75V; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:5ns; Forward Surge Current Ifsm Max:2.5A ;RoHS Compliant: Yes |
發布緊急采購，3分鐘左右您將得到回復。