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參數(shù)資料
| 型號(hào)： | 1N6642CSM-JQRS.CVB |
| 廠商： | SEMELAB LTD |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 567K |
| 代理商： | 1N6642CSM-JQRS.CVB |
SILICON EPITAXIAL
PLANAR DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 3588
Issue 2
Page 1 of 4
1N6642CSM
Low Leakage
Fast Switching
Low Forward Voltage
Hermetic Ceramic Surface Mount Package
Suitable for general purpose, switching applications.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM
Working Peak Reverse Voltage
75V
IO(1)
Average Rectified Output Current, TA = 75°C
300mA
IFSM
Surge Current, half sine wave, tp = 8.3ms
2.5A
PD(1)
Total Power Dissipation at
TA = 75°C
385mW
Derate Above 75°C
3.08mW/°C
PD
Total Power Dissipation at
TSP = 75°C
1.25W
Derate Above 75°C
10mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA(PCB)
(1)
Thermal Resistance, Junction To Ambient, On PCB
325
°C/W
RθJSP
Thermal Resistance, Junction To Solder Pads
100
°C/W
Notes
(1)
PCB = FR4 – 0.0625 Inch (1.59mm), 1 Layer, 1.0-Oz Cu, horizontal, in still air.
RθJA with a defined PCB thermal resistance condition included, is measured at IO = 300mA.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6642D1A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| 1N6642D2A | 制造商:TT Electronics/ Semelab 功能描述:DIODE HI-REL 100V 0.3A DLCC2 制造商:TT Electronics/ Semelab 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2 制造商:SEMELAB 功能描述:DIODE, HI-REL, 100V, 0.3A, DLCC2; Diode Type:Switching; Forward Current If(AV):100mA; Repetitive Reverse Voltage Vrrm Max:75V; Forward Voltage VF Max:1.2V; Reverse Recovery Time trr Max:5ns; Forward Surge Current Ifsm Max:2.5A ;RoHS Compliant: Yes |
| 1N6642D2B | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| 1N6642JANTX | 制造商:Microsemi Corporation 功能描述: 制造商: 功能描述: 制造商:undefined 功能描述: |
| 1N6642U | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:DIODE SWITCHING |
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