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參數資料
| 型號： | 1N6660R |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 Amp / 45 VOLTS COMMON CATHODE OR COMMON ANODE SCHOTTKY RECTIFIER |
| 中文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | TO-254, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 1N6660R |
580 PLEASANT ST.
WATERTOWN, MA 02172
PHONE: (617) 924-9280
FAX: (617) 924-1235
1N6660
1N6660R
MIL -S-19500/608
30 Amp / 45 VOLTS
COMMON CATHODE
OR
COMMON ANODE
SCHOTTKY RECTIFIER
TO-254
Features
Low Reverse Leakage
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Power Package
Ceramic Seals for Improved Hermeticity
Custom Lead Forming Available
Eutectic Die Attach
150
ο
C Operating Temperature
Space Level Screening Available
Available in TO-254Z Packaging
Maximum Ratings (per diode)
Peak Repetitive Reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current, 25
°
C
V
RWM
V
RRM
V
R
I
O
45 V
45 V
45 V
15 A
Note 1
300 Apk
Peak Surge Forward Current @
tp = 8.3 ms, half sinewave,
Io = 0;
V
RM
= 0
Peak Reverse Surge Current @
tp = 30
μ
s,
V
RSM
=
54 V min,
L = 260
μ
H
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
Operating Junction Temperature
I
FSM
I
RRM
2 A
R
Θ
jc
R
Θ
ja
1.65
°
C/W
40
°
C/W
T
j
-65
°
C to
150
°
C
-65
°
C to
150
°
C
Storage Temperature
T
stg
Electrical Characteristics
per diode @ 25
°
C
Unless Otherwise Specified
Parameter
Symbol
Typical
Maximum
Instantaneous
Forward
Voltage
Maximum DC
Reverse
Current At
Rated DC
Blocking
Voltage
Junction
Capacitance
*Pulse test: Pulse width 300
μ
sec, Duty cycle 2%
MA
0.55V
0.75V
1.0V
0.80V
1 mA
40 mA
Test Conditions
I
F
= 5 A;
T
J
= 25
°
C*
I
F
= 15 A;
T
J
= 25
°
C*
I
F
= 30 A;
T
J
= 25
°
C*
I
F
= 15 A;
T
J
=- 55
°
C*
T
J
= 25
°
C
T
J
= 125
°
C
V
F
I
R
50
μ
A
C
j
2000
pF
V
R
= 5 V, f = 1 MHz
MSC0268A.DOC
REVISED: 05-01-97
Note:
1. Derate linearly @ 300mA/
°
C from T
J
= T
C
= + 100
°
C to 150
°
C
A Microsemi
Company
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