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參數資料
| 型號： | 1N824 |
| 英文描述： | Bobbins Transformer; Supply Voltage:230V; Power Rating:6VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.625"; External Height:0.938"; External Width:0.938"; Frequency:60GHz; Leaded Process Compatible:Yes |
| 中文描述： | 溫補參考穩壓二極管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 97K |
| 代理商： | 1N824 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
JEDEC
ZENER
MAXIMUM
VOLTAGE
EFFECTIVE
TYPE
VOLTAGE
TEST
ZENER
TEMPERATURE
NUMBER
CURRENT
IMPEDANCE
STABILITY
COEFFICIENT
v
z
@ I
ZT
I
ZT
(Note 1)
V
ZT
Z
ZT
-55° to +100°
(Note 2)
VOLTS
mA
OHMS
mV
% / °C
1N821
5.9—6.5
7.5
15
96
0.01
1N821A
5.9—6.5
7.5
10
96
0.01
1N822
5.9—6.5
7.5
15
96
0.01
1N823
5.9—6.5
7.5
15
48
0.005
1N823A
5.9—6.5
7.5
10
48
0.005
1N824
5.9—6.5
7.5
15
48
0.005
1N825
5.9—6.5
7.5
15
19
0.002
1N825A
5.9—6.5
7.5
10
19
0.002
1N826
6.2—6.9
7.5
15
20
0.002
1N827
5.9—6.5
7.5
15
9
0.001
1N827A
5.9—6.5
7.5
10
9
0.001
1N828
6.2—6.9
7.5
15
10
0.001
1N829
5.9—6.5
7.5
15
5
0.0005
1N829A
5.9—6.5
7.5
10
5
0.0005
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2
A @ 25°C & V
R = 3 Vdc
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
Double Anode: Electrical Specications Apply Under Both Bias Polarities.
NOTE 1
Zener impedance is derived by superimposing on l
ZT
A 60Hz rms a.c. current equal
to 10% of l
ZT
.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specied mV at any discrete temperature
between the established limits, per JEDEC standard No. 5.
1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN
JAN, JANTX, JANTXV
AND JANS PER MIL-PRF-19500/159
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
1N821 thru 1N829A
and
1N821-1 thru 1N829-1
相關PDF資料 |
PDF描述 |
|---|---|
| 1N827A | TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N829UR-1 | surface mount silicon Zener diodes |
| 1N829 | TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N914 | High-speed diode |
| 1N914 | SWITCHING DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N824-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N824-1-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N824-1-2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N8241N825 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N824-2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
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