欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 1N829AUR-1-1
廠商: Microsemi Corporation
英文描述: 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
中文描述: 6.2
文件頁數: 1/4頁
文件大小: 36K
代理商: 1N829AUR-1-1
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
8-159
6.2 Volt OTC 400 mW DO-35 Data Sheet
Temperature-Compensated
Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passi-
vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
structure.
Mechanical Characteristics:
CASE:
Hermetically sealed, all-glass
DIMENSIONS:
See outline drawing.
FINISH:
All external surfaces are corrosion resistant and leads are readily solderable.
POLARITY:
Cathode indicated by polarity band.
WEIGHT:
0.2 Gram (approx.)
MOUNTING POSITION:
Any
Maximum Ratings
Junction Temperature: – 55 to +175
°
C
Storage Temperature: – 65 to +175
°
C
DC Power Dissipation: 400 mW @ TA = 50
°
C
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Phoenix, Arizona
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted. VZ = 6.2 V
±
5%* @ IZT = 7.5 mA) (Note 5)
JEDEC
Type No.
Maximum
Voltage Change
VZ (Volts)
(Note 1)
Ambient
Test Temperature
°
C
±
1
°
C
Temperature
Coefficient
For Reference Only
%/
°
C
(Note 1)
Maximum
Dynamic Impedance
ZZT Ohms
(Note 2)
1N821
0.096
– 55, 0, +25, +75, +100
0.01
15
1N823
0.048
0.005
1N825
0.019
0.002
1N827
0.009
0.001
1N829
0.005
0.0005
1N821A
0.096
0.01
10
1N823A
0.048
0.005
1N825A
0.019
0.002
1N827A
0.009
0.001
1N829A
0.005
0.0005
*Tighter-tolerance units available on special request.
1N821,A
1N825,A
1N823,A
1N827,A
1N829,A
TEMPERATURE-
COMPENSATED
SILICON ZENER
REFERENCE DIODES
6.2 V, 400 mW
CASE 299
DO-204AH
GLASS
相關PDF資料
PDF描述
1N829AUR-1-2 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N829AURTR-1-1 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N829AURTR-1-2 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N899 PELLET DIODES
1N3064M PELLET DIODES
相關代理商/技術參數
參數描述
1N829AUR-1-2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N829AUR-1TR 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
1N829AURTR 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
1N829AURTR-1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N829AURTR-1-1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
主站蜘蛛池模板: 克山县| 古蔺县| 遵化市| 舟山市| 酉阳| 昆明市| 新竹县| 攀枝花市| 确山县| 桂林市| 瓮安县| 忻州市| 北京市| 乳源| 桓仁| 合水县| 德昌县| 阜宁县| 香港 | 通辽市| 卢湾区| 邯郸县| 射洪县| 庐江县| 中宁县| 天门市| 北京市| 滁州市| 稻城县| 虹口区| 永丰县| 黄陵县| 锦州市| 惠州市| 台中县| 尼勒克县| 杭锦后旗| 交城县| 襄垣县| 东宁县| 汾阳市|