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參數(shù)資料
| 型號： | 1PMT5923BT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.2 Watt Plastic Surface Mount POWERMITE Package |
| 中文描述： | 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 62K |
| 代理商： | 1PMT5923BT1 |
Semiconductor Components Industries, LLC, 2003
July, 2003 Rev. 0
1
Publication Order Number:
1PMT5920B/D
1PMT5920B Series
3.2 Watt Plastic
Surface Mount
POWERMITE
Package
This complete new line of 3.2 Watt Zener Diodes are offered in
highly efficient micro miniature, space saving surface mount with its
unique heat sink design. The POWERMITE package has the same
thermal performance as the SMA while being 50% smaller in
footprint area and delivering one of the lowest height profiles (1.1
mm) in the industry. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines and many other
industrial/consumer applications.
Specification Features:
Zener Breakdown Voltage: 6.2 47 Volts
DC Power Dissipation: 3.2 Watts with Tab 1 (Cathode) @ 75
°
C
Low Leakage < 5 A
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint Footprint Area of 8.45 mm
2
Supplied in 12 mm Tape and Reel
T1 = 3,000 Units per Reel
T3 = 12,000 Units per Reel
POWERMITE is JEDEC Registered as DO216AA
Cathode Indicated by Polarity Band
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION:
Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
PLASTIC SURFACE MOUNT
3.2 WATT ZENER DIODES
6.2 47 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
1PMT59xxBT1 POWERMITE
3,000/Tape & Reel
1
2
1: CATHODE
2: ANODE
LEAD ORIENTATION IN TAPE:
Cathode (Short) Lead to Sprocket Holes
xxB
xx
= Specific Device Code
= 20 41
=
(See Table Next Page)
= Date Code
D
POWERMITE
CASE 457
PLASTIC
1
2
MARKING DIAGRAM
xxBD
1
CATHODE
2
ANODE
1PMT59xxBT3 POWERMITE 12,000/Tape & Reel
http://onsemi.com
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1PMT5923BT1G | 功能描述:DIODE ZENER 8.2V 3.2W POWERMITE RoHS:是 類別:分離式半導體產品 >> 單二極管/齊納 系列:- 標準包裝:1 系列:- 電壓 - 齊納（標稱）(Vz):36V 電壓 - 在 If 時為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1PMT5923BT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.2 Watt Plastic Surface Mount POWERMITE Package |
| 1PMT5923BT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.2 Watt Plastic Surface Mount POWERMITE Package |
| 1PMT5923C/TR13 | 功能描述:DIODE ZENER 8.2V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:8.2V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:3.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 6.5V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:12,000 |
| 1PMT5923C/TR7 | 功能描述:DIODE ZENER 8.2V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:8.2V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:3.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 6.5V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:3,000 |
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