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參數資料
| 型號： | 1PMT5943BT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 56 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
| 文件頁數： | 1/6頁 |
| 文件大小： | 138K |
| 代理商： | 1PMT5943BT3 |
1
MOTOROLA
1PMT5913BT3 through 1PMT5948BT3
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This complete new line of zener/tvs diodes offers a 2.5 watt series in a micro
miniature, space saving surface mount package. The Powermite zener/tvs
diodes are designed for use as a tvs or a regulation device in automotive and
telecommunication applications where efficiency, low leakage, size/height and
profile are important.
Features:
Voltage Range – 3.3 to 91 V
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile – maximum height of 1.1mm
Integral Heat Sink/Locking Tabs
Full metallic bottom eliminates flux entrapment
Small Footprint – Footprint area of 8.45mm2
Supplied in 12mm tape and reel – 12,000 units per reel
Powermite is JEDEC Registered as DO–216AA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ TL = 75
°
C, Measured at Zero Lead Length
Derate above 75
°
C
°
PD
°
2.5
40
°
Watts
°
mW/
°
C
DC Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
°
PD
°
380
2.8
°
mW
mW/
°
C
Thermal Resistance from Junction to Lead
R
θ
JL
R
θ
JA
TJ, Tstg
Ppk
Ppk
26
°
C/W
Thermal Resistance from Junction to Ambient
324
°
C/W
Operating and Storage Junction Temperature Range
Typical Ppk Dissipation @ TL < 25
°
C, (PW–10/1000
μ
s per Figure 8)(2)
Typical Ppk Dissipation @ TL < 25
°
C, (PW–8/20
μ
s per Figure 9)(2)
(1)FR4 Board, within 1” to device, using Motorola minimum recommended footprint, as shown in case 403A outline dimensions spec.
(2)Non–repetitive current pulse.
– 65 to +150
°
C
200
Watts
1000
Watts
This document contains preview information only and is subject to change without notice.
Powermite is a registered trademark of Microsemi Corporation.
Thermal Clad is a trademark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1PMT5913BT3/D
%#"&
PLASTIC SURFACE MOUNT
ZENER DIODES
2.5 WATTS
3.3–91 VOLTS
CASE 457–01
PLASTIC
1
2
1
2
1: CATHODE
2: ANODE
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1PMT5943C/TR13 | 制造商:Microsemi Corporation 功能描述:3.0W, VZ = 56V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 3W 56V 2% POWERMITE |
| 1PMT5943C/TR7 | 制造商:Microsemi Corporation 功能描述:3.0W, VZ = 56V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 3W 56V 2% POWERMITE |
| 1PMT5943CE3/TR13 | 功能描述:DIODE ZENER 56V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態:有效 電壓 - 齊納（標稱值）（Vz）:56V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:86 歐姆 不同?Vr 時的電流 - 反向漏電流:1μA @ 42.6V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:12,000 |
| 1PMT5943CE3/TR7 | 制造商:Microsemi Corporation 功能描述:3.0W, VZ = 56V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 3W 56V 2% POWERMITE |
| 1PMT5943E3/TR13 | 功能描述:DIODE ZENER 56V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態:有效 電壓 - 齊納（標稱值）（Vz）:56V 容差:±20% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:86 歐姆 不同?Vr 時的電流 - 反向漏電流:1μA @ 42.6V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應商器件封裝:DO-216AA 標準包裝:12,000 |
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