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參數(shù)資料
| 型號(hào)： | 1S80 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
| 中文描述： | 1 A, 80 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, R-1, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 86K |
| 代理商： | 1S80 |
1S20
THRU
1SA0
1.0 Amp Schottky
Barrier Rectifier
20 to 100 Volts
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low power loss, high efficiency
High current capability, Low forward voltage drop
High surge capability
Metal silicon junction, majority carrier conduction
Maximum Ratings
Operating Temperature: -55
°
C to +125
°
C
Storage Temperature: -55
°
C to +150
°
C
Maximum Thermal Resistance: 50
o
C/W Junction to Lead
MCC
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
Maximum DC
Blocking
Voltage
1S20
1S30
1S40
1S50
1S60
1S80
1SA0
14V
21V
28V
35V
42V
56V
70V
20V
30V
40V
50V
60V
80V
100V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
1S20-1S40
1S50-1S60
1S80-1SA0
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Pulse Test: Pulse width 300 usec, Duty cycle 1%.
I
F(AV)
1.0 A
T
C
= 75
°
C
I
FSM
35A
8.3ms, half sine
V
F
0.55V
0.70V
0.85V
I
FM
= 1.0A;
T
C
= 25
°
C
I
R
0.5mA
10mA
T
C
= 25
°
C
T
C
= 100
°
C
C
J
110pF
Measured at
1.0MHz, V
R
=4.0V
www.
mc c semi
.c om
MIN
MAX
MIN
MAX
A
0.116
0.140
2.90
3.50
B
0.091
0.102
2.30
2.60
C
0.020
0.024
0.50
0.60
D
0.787
-----
20.00
-----
DIMENSIONS
DIM
INCHES
MM
NOTE
A
B
D
D
C
Cathode Mark
R-1
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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