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參數資料
型號: 1SS201
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: 1-4E2A, 3 PIN
文件頁數: 1/3頁
文件大小: 171K
代理商: 1SS201
1SS201
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*)
Unit rating. Total rating = Unit rating ×1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.60
VF (2)
IF = 10mA
0.72
Forward voltage
VF (3)
IF = 100mA
0.90
1.20
V
IR (1)
VR = 30V
0.1
Reverse current
IR (2)
VR = 80V
0.5
μA
Total capacitance
CT
VR = 0, f = 1MHz
0.9
3.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
1.6
4.0
ns
JEDEC
JEITA
TOSHIBA
14E2A
Weight: 0.13g (typ.)
Unit: mm
相關PDF資料
PDF描述
1SS220-T1B 0.1 A, SILICON, SIGNAL DIODE
1SS221-L 0.1 A, SILICON, SIGNAL DIODE
1SS220-T2B 0.1 A, SILICON, SIGNAL DIODE
1SS222-T2B 0.1 A, SILICON, SIGNAL DIODE
1SS222-L 0.1 A, SILICON, SIGNAL DIODE
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