欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: 1SS250
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.1 A, 200 V, SILICON, SIGNAL DIODE
封裝: 1-3G1B, S-MINI, SC-59, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 179K
代理商: 1SS250
1SS250
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS250
Ultra High Speed Switching Application
Low forward voltage
: VF (2) = 0.90V (typ.)
Fast reverse recovery time: trr = 60ns (max)
Small total capacitance
: CT = 1.5pF (typ.)
Small package
: SC59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Peak reverse voltage
VRM
250
V
Reverse voltage
VR
200
V
Peak forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10 ms)
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 10mA
0.72
1.00
Forward voltage
VF (2)
IF = 100mA
0.90
1.20
V
IR (1)
VR = 50V
0.1
Reverse current
IR (2)
VR = 200V
1.0
μA
Total capacitance
CT
VR = 0, f = 1MHz
1.5
3.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
10
60
ns
Fig.1 Reverse recovery time (trr) test circuit
Marking
JEDEC
JEITA
SC59
TOSHIBA
13G1B
Weight: 0.012g (typ.)
Unit: mm
相關(guān)PDF資料
PDF描述
1SS252T-73 0.13 A, 90 V, SILICON, SIGNAL DIODE
1SS265T-72 SILICON, VHF-UHF BAND, MIXER DIODE
1SS265T-77 SILICON, VHF-UHF BAND, MIXER DIODE
1SS265T-82 0.1 A, SILICON, SIGNAL DIODE
1SS265UH02 SILICON, VHF-UHF BAND, MIXER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1SS250(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:X34 PB-F S-MINI SW DIODE (LF), PD=150MW IFM=300MA - Tape and Reel 制造商:Toshiba 功能描述:Diode Switching 250V 0.1A 3-Pin SMini T/R 制造商:Toshiba America Electronic Components 功能描述:Diode,Sw,200V/0.1A,Single,trr=30ns,SC-59 制造商:Toshiba America Electronic Components 功能描述:Diode, switching, fast, S-MINI(SC-59),
1SS250T5LFT 功能描述:二極管 - 通用,功率,開關(guān) Diode RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
1SS250T5LT 制造商:Toshiba America Electronic Components 功能描述:ULTRA FAST RECOVERY RECTFR 250V 0.1A 3PIN S-MINI - Tape and Reel
1SS250TE85L 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type
1SS254 制造商:Panasonic Industrial Company 功能描述:DIODE SUB: RVD1SS133TA
主站蜘蛛池模板: 常德市| 毕节市| 噶尔县| 永昌县| 温州市| 乳山市| 孙吴县| 墨玉县| 桑日县| 开鲁县| 北流市| 龙泉市| 泰州市| 泸水县| 唐山市| 阿鲁科尔沁旗| 红河县| 垫江县| 奉新县| 泽普县| 乡宁县| 宁蒗| 南丹县| 浦东新区| 称多县| 玛多县| 舟山市| 廉江市| 正定县| 海兴县| 海淀区| 庆城县| 和顺县| 胶南市| 和龙市| 兴海县| 府谷县| 喀喇| 济阳县| 平湖市| 区。|