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參數資料
| 型號： | 1SS311 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | S-MINI, 1-3G1B, SC-61, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 180K |
| 代理商： | 1SS311 |
1SS311
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS311
High Voltage,High Speed Switching Applications
Low forward voltage
: VF = 0.94V (typ.)
High voltage
: VR = 400V (min)
Fast reverse recovery time: trr = 1.5ns (typ.)
Small total capacitance
: CT = 3.2pF (typ.)
Small package
: SC59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55
125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 10mA
―
0.80
―
Forward voltage
VF (2)
―
IF = 100mA
―
0.94
1.20
V
IR (1)
―
VR = 300V
―
0.1
Reverse current
IR (2)
―
VR = 400V
―
1.0
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
3.2
5.0
pF
Reverse recovery time
trr
―
IF = 10mA
―
1.5
―
μs
Marking
JEDEC
―
JEITA
SC61
TOSHIBA
13G1B
Weight: 0.012g (typ.)
Unit: mm
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相關代理商/技術參數 |
參數描述 |
|---|---|
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