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參數資料
| 型號： | 1SS319 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | 2-3J1A, SC-61, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 191K |
| 代理商： | 1SS319 |
1SS319
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS319
Low Voltage High Speed Switching
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max)
Small package
: SC-61
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Power dissipation
P
150 (*)
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55
125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating
× 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.28
―
VF (2)
―
IF = 10mA
―
0.36
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.54
0.60
V
Reverse current
IR
―
VR = 40V
―
5
μ
A
Total capacitance
CT
―
VR = 0, f = 1MHz
―
18
25
pF
Marking
JEDEC
―
JEITA
SC61
TOSHIBA
23J1A
Weight: 0.013g (typ.)
Unit: mm
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