- 您現在的位置：買賣IC網 > PDF目錄91048 > 1SS352 0.1 A, SILICON, SIGNAL DIODE PDF資料下載
參數資料
| 型號： | 1SS352 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | 1-1E1A, USC, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 207K |
| 代理商： | 1SS352 |
1SS352
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS352
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.5pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P
200 (*)
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Mounted on a glass epoxy circuit board of 20
× 20mm,
pad dimension of 4
× 4mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.62
―
VF (2)
―
IF = 10mA
―
0.75
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.98
1.20
V
IR (1)
―
VR = 30V
―
0.1
Reverse current
IR (2)
―
VR = 80V
―
0.5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
0.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA, Fig.1
―
1.6
4.0
ns
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004g (typ.)
Unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| 1SS353 | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS355 | 0.1 A, 90 V, SILICON, SIGNAL DIODE |
| 1SS355 | 0.15 A, 90 V, SILICON, SIGNAL DIODE |
| 1SS357TPH4 | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS357 | 0.1 A, SILICON, SIGNAL DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1SS352(TH3,F,D) | 功能描述:整流器 85V VRM 80V VR 200mA 100mA IO 1A IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1SS352(TH3,F,T) | 功能描述:二極管 - 通用，功率，開關 Vr=80V If=0.1A 2Pin RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1SS352(TPH3,F) | 制造商:Toshiba America Electronic Components 功能描述:ULTRA FAST RECOVERY RECTFR 85V 0.1A 2PIN USC - Tape and Reel 制造商:Toshiba 功能描述:Diode Switching 85V 0.1A 2-Pin USC T/R Tape & Reel 制造商:Toshiba America Electronic Components 功能描述:VR80V,IF0.1A,VF=1.2V,trr=1.6ns(typ.),USC |
| 1SS352,H3F | 制造商:Toshiba America Electronic Components 功能描述:X34 PB-FREE USC-M8 DIODE (LF) - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 80V 100MA USC |
| 1SS352_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
發布緊急采購，3分鐘左右您將得到回復。