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參數資料
| 型號： | 1SS370 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | SC-70, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 155K |
| 代理商： | 1SS370 |
1SS370
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS370
High Voltage, High Speed Switching Applications
Low forward voltage
: VF (2) = 0.9V (typ.)
Fast reverse recovery time: trr = 60ns (typ.)
Small total capacitance
: CT = 1.5pF (typ.)
Small package
: SC-70
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
250
V
Reverse voltage
VR
200
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
2
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 10mA
―
0.72
1.0
Forward voltage
VF (2)
―
IF = 100mA
―
0.90
1.2
V
IR (1)
―
VR = 50V
―
0.1
Reverse current
IR (2)
―
VR = 200V
―
1.0
A
Total capacitance
CT
―
VR = 0, f = 1MHz
―
1.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA, Fig.1
―
10
60
ns
JEDEC
―
EIAJ
SC70
TOSHIBA
1-2P1D
Weight: 0.006g
Unit: mm
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1SS370(TE85L,F) | 制造商:Toshiba 功能描述:Diode Switching 250V 0.1A 3-Pin USM T/R 制造商:Toshiba America Electronic Components 功能描述:Diode,SW,Vr=200V,Io=100mA,USM |
| 1SS370_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Voltage, High Speed Switching Applications |
| 1SS370TE85LF | 制造商:Toshiba America Electronic Components 功能描述:DIODE SW 200V 100MA USM |
| 1SS370W | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:Silicon Epitaxial Planar Diode |
| 1SS372 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Schottky Barrier Diode |
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