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參數(shù)資料
型號(hào): 1SS393
元件分類(lèi): 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: USM, 1-2P1B, SC-70, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 176K
代理商: 1SS393
1SS393
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS393
High Speed Switching Application
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max)
Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Operating temperature range
Topr
40
100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating
× 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.28
VF (2)
IF = 10mA
0.36
Forward voltage
VF (3)
IF = 100mA
0.54
0.60
V
Reverse current
IR
VR = 40V
5
μA
Total capacitance
CT
VR = 0, f = 1MHz
18
25
pF
JEDEC
JEITA
SC-70
TOSHIBA
1-2P1B
Weight: 0.006g (typ.)
Unit: mm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1SS393(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:Diode,SBD,Vr=40V,Io=100mA,USM
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1SS393_07 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:High Speed Switching Application
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