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參數資料
| 型號： | 1SS85 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 16K |
| 代理商： | 1SS85 |
Features
Low forward resistance. (r
f
= 0.9
max)
High reliability with glass seal.
Ordering Information
Type No.
Cathode 2nd Band
Mark Package Code
1SS85
Verdure Black
H
DO-35
Outline
1. Cathode
2. Anode
Cathode band
1
2
2nd band
H
ADE-208-152 (Z)
Preliminary
Rev. 0
Oct. 1993
1SS85
Silicon Epitaxial Planar Diode
for VHF tuner Band Switch
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
F
P
d
Topr
Tstg
35
V
Forward current
100
mA
Power dissipation
150
mW
Operation temperature
-20 to + 60
°C
Storage temperature
-55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
V
R
I
R
C
—
—
1.0
V
I
F
= 10 mA
I
R
= 10 μA
V
R
= 25 V
V
R
= 6 V , f = 1 MHz
I
F
= 2 mA , f = 100 MHz
f = 250 MHz
Reverse voltage
35
—
—
V
Reverse current
Capacitance
—
—
—
—
0.1
1.2
μA
pF
Forward resistance
r
f
L
s
*
—
—
0.9
Lead Inductance
* The each lead length from glass body is 4mm.
—
—
3.0
nH
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相關代理商/技術參數 |
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|---|---|
| 1SS86 | 制造商:Renesas Electronics 功能描述:Diode Schottky 3V 0.03A 2-Pin DO-35 制造商:Renesas Electronics 功能描述:Diode Schottky 3V 0.03A 2-Pin DO-35 Bulk |
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| 1SS92 | 制造商:ROHM 制造商全稱:Rohm 功能描述:SILICON EPITAXIAL PLANAR ULTRA-HIGH SPEED SWITCHING DIODES |
| 1SS93 | 制造商:ROHM 制造商全稱:Rohm 功能描述:SILICON EPITAXIAL PLANAR ULTRA-HIGH SPEED SWITCHING DIODES |
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