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參數資料
| 型號： | 1SV280 |
| 元件分類： | 變容二極管 |
| 英文描述： | UHF BAND, 4.25 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1G1A, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 142K |
| 代理商： | 1SV280 |
1SV280
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV280
VCO for UHF Band Radio
High capacitance ratio: C2 V/C10 V = 2.4 (typ.)
Low series resistance: rs = 0.44 (typ.)
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
15
V
Reverse current
IR
VR = 15 V
3
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
3.8
4.7
pF
Capacitance
C10 V
VR = 10 V, f = 1 MHz
1.5
2.0
pF
Capacitance ratio
C2 V/C10 V
2.0
2.4
Series resistance
rs
VR = 1 V, f = 470 MHz
0.44
0.6
Ω
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
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