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參數資料
| 型號： | 1SV323 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Diode Silicon Epitaxial Planar Type TCXO/VCO |
| 中文描述： | 東芝半導體硅外延平面型的TCXO /振蕩器 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 97K |
| 代理商： | 1SV323 |
1SV323
2003-03-24
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV323
TCXO/VCO
High capacitance ratio: C
1 V
/C
4 V
= 4.3 (typ.)
Low series resistance: r
s
= 0.4
(typ.)
Useful for small size tuner.
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
10
V
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
1 A
10
V
Reverse current
I
R
V
R
10 V
3
nA
Capacitance
C
1 V
V
R
1 V, f 1 MHz
26.5
29.5
pF
Capacitance
C
4 V
V
R
4 V, f 1 MHz
6.0
7.1
pF
Capacitance ratio
C
1 V
/C
4 V
4.0
4.3
Series resistance
r
s
V
R
4 V, f 100 MHz
0.4
0.8
Note: Signal level when capacitance is measured: Vsig 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
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