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參數資料
| 型號： | 2223-17 |
| 英文描述： | 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz |
| 中文描述： | 1.7瓦特- 24伏特，C類微波2200年至2300年兆赫 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 253K |
| 代理商： | 2223-17 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2223-1.7
1.7 Watts - 24 Volts, Class C
Microwave 2200 - 2300
MHz
GENERAL DESCRIPTION
The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts
of Class C, RF output power over the band 2200 - 2300 MHz. This transistor
is designed for Microwave Broadband Class C amplifier applications. It
includes input prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
7 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 45 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current .25 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
Pout
Pin
Pg
η
c
VSWR
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
Vcc = 24 Volts
.25
Watts
dB
%
Power Output
F =2.2 - 2.3 GHz
1.7
Watts
8.3
35
10:1
BVces
BVebo
Hfe
Cob
θ
jc
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ie = 2 mA
Vce = 5 V, Ic = 160mA
Vcb = 28V, 1MHz
Tc = 25 C
3.5
10
Volts
Collector to Base Breakdown
Ic = 10 mA
40
Volts
100
pF
C/W
24
o
Issue A June 1997
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相關代理商/技術參數 |
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| 22232021 | 制造商:Molex 功能描述: |
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