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參數資料
| 型號： | 22SC5405 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | npn型三重擴散硅平面型 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 22SC5405 |
1
Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
I
Features
G
High-speed switching
G
High forward current transfer ratio h
FE
which has satisfactory
linearity
G
Dielectric breakdown voltage of the package: > 5kV
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
50
6
6
3
1
20
2.0
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.05A, I
B2
= – 0.1A,
V
CC
= 50V
min
50
500
typ
0.5
75
0.3
3.5
0.9
max
100
100
100
1500
0.7
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE
Rank classification
Rank
P
Q
h
FE
800 to 1500 500 to 1000
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
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