欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 23A017
英文描述: TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | FO-41BVAR
中文描述: 晶體管|晶體管|叩| 50V五(巴西)總裁| 800mA的一(c)|佛41BVAR
文件頁數: 1/2頁
文件大小: 30K
代理商: 23A017
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A017
1.7 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 6.0 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 800 mA
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
Ic = 280 mA
Vcc = 20 Volts
Vce = 20V, Ic =280 mA
1.7
6.25
3.4
2.2
7.6
3.7
.38
9:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 2 mA
Ic = 20 mA
Ic = 20 mA
Vce = 5 V, Ic = 200 mA
Vcb = 28V, f = 1 MHz
3.5
50
22
20
4.8
14
16
Volts
Volts
Volts
pF
C/W
o
Initial Issue June, 1994
相關PDF資料
PDF描述
23A025 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR
23C1010 1M-BIT MASK ROM (8 BIT OUTPUT)
23C1610-10 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
23C1610-12 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
23C1610-15 5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
相關代理商/技術參數
參數描述
23A01880 制造商:DANAHER - INDUSTRIAL/SPECIALTY 功能描述:CONNECTOR
23A025 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS BIPO 55BT-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
23A-03 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL
23A05Z8K 制造商:Quam-Nichols Manufacturing 功能描述:
23A-06 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL
主站蜘蛛池模板: 绥滨县| 栖霞市| 文昌市| 抚远县| 南投县| 承德县| 通化县| 侯马市| 岢岚县| 宣汉县| 上蔡县| 东阳市| 石河子市| 铅山县| 清水县| 黄石市| 拉孜县| 修武县| 五台县| 西华县| 莫力| 裕民县| 方山县| 新巴尔虎右旗| 金沙县| 天气| 嵊州市| 安远县| 襄城县| 安庆市| 沁阳市| 西华县| 长丰县| 景谷| 栾城县| 莎车县| 中江县| 治县。| 崇文区| 上林县| 怀远县|