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參數(shù)資料
| 型號： | 2501NZ |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 雙N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2501NZ |
October 2002
2002 Fairchild Semiconductor Corporation
FDW2501NZ Rev
E1
(W)
FDW2501NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
5.5 A, 20 V.
R
DS(ON)
= 18 m
@ V
GS
= 4.5V
R
DS(ON)
= 25 m
@ V
GS
= 2.5V
Extended V
GSS
range (±12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
5.5
30
1.0
0.6
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
2501NZ
FDW2501NZ
(Note 1a)
(Note 1b)
100
125
°
C/W
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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