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參數資料
| 型號： | 2729-125 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, 55KS-1, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 299K |
| 代理商： | 2729-125 |
2729-125
125 Watts, 36 Volts, 100s, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-125 is an internally matched, COMMON BASE bipolar transistor
capable of providing 125 Watts of pulsed RF output power at 100s pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°C1
350 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
Emitter to Base Voltage (BVebo)
3.0 V
Collector Current (Ic)
15 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
Pout
Power Output
F=2700-2900 MHz
125
W
Pin
Power Input
Vcc = 36 Volts
15.7
W
Pg
Power Gain
Pulse Width = 100 s
9.0
9.5
dB
ηc
Collector Efficiency
Duty Factor = 10%
45
55
%
VSWR
Load Mismatch Tolerance1
F = 2900 MHz, Po = 125W
2:1
FUNCTIONAL CHARACTERISTICS @ 25
°C
BVebo
Emitter to Base Breakdown
Ie = 30 mA
3.0
V
BVces
Collector to Emitter Breakdown Ic = 120 mA
56
65
V
hFE
DC – Current Gain
Vce = 5V, Ic = 600 mA
18
50
θjc1
Thermal Resistance
0.5
°C/W
NOTE:
1. At rated output power and pulse conditions
Issue April 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
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