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參數資料
| 型號： | 2731-100M |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, CASE 55KS-1, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 306K |
| 代理商： | 2731-100M |
2731-100MR3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
2731-100M
100 Watts, 36 Volts, 200μs, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
The 2731-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 200μs pulse
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor
prematch and test fixture has been optimized through the use of 10 Ohm TRL
Analysis.
This ceramic sealed transistor is specifically designed for S-band
radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°
C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
Emitter to Base Voltage (BV
ebo
)
Collector Current (I
c
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
575 W
65 V
3.0 V
15.0 A
-65 to +200
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL CHARACTERISTICS
Power Output
P
g
Power Gain
η
c
Collector Efficiency
R
l
Return Loss
P
d
Pulse Droop
VSWR-T
Load Mismatch Tolerance
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
F=2700-3100 MHz
Pulse Width = 200 μs
Duty Factor = 10 %
Power Input = 16W
Vcc = +36V
F = 2700, 2900, 3100 MHz
100
8.0
40
-7
115
8.5
140
9.4
0.6
2:1
W
dB
%
dB
dB
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
ebo
BV
ces
h
FE
θ
jc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown Ic = 120 mA
DC – Current Gain
Thermal Resistance
Ie = 30 mA
3.0
65
V
V
Vce = 5V, Ic = 600 mA
15
0.43
°
C/W
Issue March 2006
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