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參數資料
| 型號： | 27C16Q450 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
| 中文描述： | 16,384位（2048 × 8）紫外線擦除的CMOS PROM的軍用合格 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 111K |
| 代理商： | 27C16Q450 |
TL/D/10329
2
January 1989
27C16
16,384-Bit (2048 x 8) UV Erasable CMOS PROM
Military Qualified
General Description
The 27C16 is a high speed 16K UV erasable and electrically
reprogrammable CMOS EPROM, ideally suited for applica-
tions where fast turnaround, pattern experimentation and
low power consumption are important requirements.
The 27C16 is packaged in a 24-pin dual-in-line package with
transparent lid. The transparent lid allows the user to ex-
pose the chip to ultraviolet light to erase the bit pattern. A
new pattern can then be written into the device by following
the programming procedure.
This EPROM is fabricated with the reliable, high volume,
time proven, P
2
CMOS
TM
silicon gate technology.
The 27C16 specified on this data sheet is fully compliant
with MIL-STD-883, Revision C.
Features
Y
Access time down to 450 ns
Y
Low CMOS power consumption
D Active Power: 26.25 mW max
D Standby Power: 0.53 mW max (98% savings)
Y
Performance compatible to NSC800
TM
CMOS micro-
processor
Y
Single 5V power supply
Y
Pin compatible to MM2716 and higher density EPROMs
Y
StaticDno clocks required
Y
TTL compatible inputs/outputs
Y
TRI-STATE
é
output
Y
Windowed DIP Package
Y
Specifications guaranteed over full military temperature
range (
b
55
§
C to
a
125
§
C)
Block Diagram
TL/D/10329–1
Pin Names
A0–A10
Addresses
CE
Chip Enable
OE
Output Enable
O
0
–O
7
Outputs
PGM
Program
NC
No Connect
TRI-STATE
é
is a registered trademark of National Semiconductor Corporation.
NS800
TM
are P
2
CMOS
TM
trademarks of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation
RRD-B30M105/Printed in U. S. A.
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