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參數(shù)資料
型號: 27C800
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
中文描述: 8兆1兆x8或512KB的x16紫外線存儲器和OTP存儲器
文件頁數(shù): 1/17頁
文件大小: 115K
代理商: 27C800
1/17
January 2000
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
I
5V
±
10% SUPPLY VOLTAGE in READ
OPERATION
I
ACCESS TIME: 50ns
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
8 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Stand-by Current 50
μ
A
I
PROGRAMMING VOLTAGE: 12.5V
±
0.25V
I
PROGRAMMING TIME: 50
μ
s/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
DESCRIPTION
The M27C800 is an 8 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systemsrequiring largedata orprogram
storage. It is organised as either 1 Mwords of 8 bit
or 512 Kwords of 16 bit. The pin-out is compatible
with the most common 8 Mbit Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern.
A new patterncanthen bewritten rapidlyto the de-
vice by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27C800 is offered in PDIP42, PLCC44 and
SO44 packages.
1
42
1
42
44
1
FDIP42W (F)
PDIP42 (B)
SO44 (M)
PLCC44 (K)
Figure 1. Logic Diagram
AI01593
19
A0-A18
BYTEVPP
Q0-Q14
VCC
M27C800
G
E
VSS
15
Q15A–1
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