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參數資料
| 型號： | 28C010TRT4FB-12 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 5V, 120 ns, DFP32 |
| 封裝： | DFP-32 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 359K |
| 代理商： | 28C010TRT4FB-12 |
1
M
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - wwwmaxwell.com
1 Megabit (128K x 8-Bit) EEPROM
28C010T
2003 Maxwell Technologies
All rights reserved.
06.03.03 REV 14
F
EATURES
:
128k x 8-bit EEPROM
R
AD
-P
AK
radiation-hardened against natural space radia-
tion
Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single event effects
- SEL
TH
> 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
- SEU = 18 MeV/mg/cm
2
write mode
Package:
- 32-pin R
AD
-P
AK
flat pack/DIP package
- JEDEC-approved byte-wide pinout
High speed:
- 120, 150, and 200 ns maximumaccess times available
High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
Page write mode:
- 1 to 128 bytes
Low power dissipation
- 20 mW/MHz active (typical)
- 110 μW standby (maximum
Standard JEDEC package width
D
ESCRIPTION
:
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROMmcrocircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space ms-
sion. The 28C010T is capable of in-systemelectrical byte and
page programmability. It has a 128-byte page programmng
function to make its erase and write operations faster. It also
features data polling and a Ready/Busy signal to indicate the
completion of erase and programmng operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is imple-
mented using the JEDEC optional standard algorithm
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mssion. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad(Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| 28C010TRT4FB-15 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FB-20 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FI-12 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FI-15 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FI-20 | 1 Megabit (128K x 8-Bit) EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28C010TRT4FB-15 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FB-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FE-12 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FE-15 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C010TRT4FE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
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