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參數資料
| 型號： | 28C011TRT1FE-15 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 5V, 150 ns, DFP32 |
| 封裝： | LDFP-32 |
| 文件頁數： | 1/19頁 |
| 文件大小： | 348K |
| 代理商： | 28C011TRT1FE-15 |
1
M
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - wwwmaxwell.com
1 Megabit (128K x 8-Bit) EEPROM
28C011T
2003 Maxwell Technologies
All rights reserved.
11.10.03 REV 10
F
EATURES
:
128k x 8-bit EEPROM
R
AD
-P
AK
radiation-hardened against natural space radia-
tion
Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
Package:
- 32-pin R
AD
-P
AK
flat package
- 32-pin Rad-Tolerant flat package
- JEDEC-approved byte-wide pinout
High speed:
- 120, 150, and 200 ns maximumaccess times available
High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
Page write mode:
- 1 to 128 bytes
Low power dissipation
- 20 mW/MHz active (typical)
- 110 μW standby (maximum
D
ESCRIPTION
:
Maxwell Technologies’ 28C011T high-density 1 Megabit (128K
x 8-Bit) EEPROMmcrocircuit features a greater than 100
krad (Si) total dose tolerance, depending upon space mssion.
The 28C011T is capable of in-systemelectrical byte and page
programmability. It has a 128-byte page programmng function
to make its erase and write operations faster. It also features
data polling and a Ready/Busy signal to indicate the comple-
tion of erase and programmng operations. In the 28C010T,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Software data protection is implemented
using the JEDEC optional standard algorithm
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mssion. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
28C011T
相關PDF資料 |
PDF描述 |
|---|---|
| 28C011TRT1FE-20 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT1FS-12 | POT 100K OHM THUMBWHEEL CERM ST |
| 28C011TRT1FS-15 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT2FS-12 | 1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT2FS-15 | 1 Megabit (128K x 8-Bit) EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28C011TRT1FE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT1FI | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT1FI-12 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT1FI-15 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
| 28C011TRT1FI-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Megabit (128K x 8-Bit) EEPROM |
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