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參數資料
| 型號： | 28F001BN-B |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 1兆位（128K的× 8）引導塊閃存 |
| 文件頁數： | 1/44頁 |
| 文件大小： | 496K |
| 代理商： | 28F001BN-B |
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Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290450-005
4-MBlT (256K x 16, 512K x 8)
LOW-POWER BOOT BLOCK
FLASH MEMORY FAMILY
28F400BL-T/B, 28F004BL-T/B
Y
Low Voltage Operation for Very
Low-Power Portable Applications
D V
CC
e
3.0V–3.6V Read
D V
CC
e
3.15V–3.6V Program/Erase
Y
Expanded Temperature Range
D
b
20
§
C to
a
70
§
C
Y
x8/x16 Input/Output Architecture
D 28F400BL-T, 28F400BL-B
D For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
x8-only Input/Output Architecture
D 28F004BL-T, 28F004BL-B
D For Space Constrained 8-bit
Applications
Y
Upgradeable to Intel’s SmartVoltage
Products
Y
Optimized High Density Blocked
Architecture
D One 16-KB Protected Boot Block
D Two 8-KB Parameter Blocks
D One 96-KB Main Block
D Three 128-KB Main Blocks
D Top or Bottom Boot Locations
Y
Extended Cycling Capability
D 10,000 Block Erase Cycles
Y
Automated Word/Byte Write and Block
Erase
D Command User Interface
D Status Registers
D Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
D 0.8 mA typical I
CC
Active Current in
Static Operation
Y
Very High-Performance Read
D 150 ns Maximum Access Time
D 65 ns Maximum Output Enable Time
Y
Low Power Consumption
D 15 mA Typical Active Read Current
Y
Reset/Deep Power-Down Input:
D 0.2
m
A I
CC
Typical
D Acts as Reset for Boot Operations
Y
Write Protection for Boot Block
Y
Hardware Data Protection Feature
D Erase/Write Lockout During Power
Transitions
Y
Industry Standard Surface Mount
Packaging
D 28F400BL: JEDEC ROM
Compatible
44-Lead PSOP
56-Lead TSOP
D 28F004BL: 40-Lead TSOP
Y
12V Word/Byte Write and Block Erase
D V
PP
e
12V
g
5% Standard
Y
ETOX
TM
III Flash Technology
D 3.3V Read
相關PDF資料 |
PDF描述 |
|---|---|
| 28F001BN-T | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-B | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F002BL-B | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BL-T | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BV-T | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28F001BN-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
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