
E
INTEL CONFIDENTIAL
(until publication date)
December 1998
Order Number: 290406-009
n
High-Integration Blocked Architecture
One 8 KB Boot Block w/Lock Out
Two 4 KB Parameter Blocks
One 112 KB Main Block
n
Simplified Program and Erase
Automated Algorithms via On-Chip
Write State Machine (WSM)
n
SRAM-Compatible Write Interface
n
Deep Power-Down Mode
0.05 μA I
CC
Typical
0.8 μA I
PP
Typical
n
12.0 V ±5% V
PP
n
High-Performance Read
120 ns, 150 ns Maximum Access
Time
5.0 V ±10% V
CC
n
Hardware Data Protection Feature
Erase/Write Lockout during Power
Transitions
n
Advanced Packaging, JEDEC Pinouts
32-Pin PDIP
32-Lead PLCC
n
ETOX II Nonvolatile Flash
Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
The Intel
28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with
features that simplify write and allow block erase. These devices aid the system designer by combining the
functions of several components into one, making boot block flash an innovative alternative to EPROM and
EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the
28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor
interface.
The 28F001BX-B and 28F001BX-T are 1,048,576 bit nonvolatile memories organized as 131,072 bytes of
eight bits. They are offered in 32-pin plastic DIP and 32-lead PLCC packages. Pin assignment conform to
JEDEC standards for byte-wide EPROMs. These devices use an integrated command port and state
machine for simplified block erasure and byte reprogramming. The 28F001BX-T’s block locations provide
compatibility with microprocessors and microcontrollers that boot from high memory, such as Intel
MCS-
186 family, 80286, i386, i486, i860 and 80960CA. With exactly the same memory segmentation, the
28F001BX-B memory map is tailored for microprocessors and microcontrollers that boot from low memory,
such as Intel’s MCS-51, MCS-196, 80960KX and 80960SX families. All other features are identical, and
unless otherwise noted, the term 28F001BX can refer to either device throughout the remainder of this
document.
The boot block section includes a reprogramming write lock out feature to guarantee data integrity. It is
designed to contain secure code which will bring up the system minimally and download code to the other
locations of the 28F001BX. Intel 28F001BX employs advanced CMOS circuitry for systems requiring high-
performance access speeds, low-power consumption, and immunity to noise. Its access time provides zero
wait-state performance for a wide range of microprocessors and microcontrollers. A deep power-down mode
lowers power consumption to 0.25 μW typical through V
CC
—crucial in laptop computer, hand-held
instrumentation and other low-power applications. The RP# power control input also provides absolute data
protection during system power-up or power loss.
Manufactured on Intel
ETOX process technology base, the 28F001BX builds on years of EPROM
experience to yield the highest levels of quality, reliability, and cost-effectiveness.
Note:
This document formerly known as
1-Mbit (128K x 8) Boot Block Flash Memory
.
5 VOLT BOOT BLOCK FLASH MEMORY
28F001BX (x8)