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參數(shù)資料
型號(hào)： 28F128J3A
廠商： Intel Corp.
英文描述： 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
中文描述： 3伏特英特爾StrataFlash存儲(chǔ)器（128兆位3伏地層的閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 1/58頁(yè)
文件大小： 574K
代理商： 28F128J3A
3 Volt Intel
StrataFlash Memory
28F128J3A, 28F640J3A, 28F320J3A (x8/x16)
Product Preview Datasheet
Product Features
Capitalizing on Intel’s 0.25 μ generation two-bit-per-cell technology, second generation Intel
StrataFlash memory products provide 2X the bits in 1X the space, with new features for mainstream
performance. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, these devices bring
reliable, two-bit-per-cell storage technology to the flash market segment.
Benefits include: more density in less space, high-speed interface, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory
devices take advantage of over 700 million units of manufacturing experience since 1987. As a
result, Intel StrataFlash components are ideal for code and data applications where high density and low
cost are required. Examples include networking, telecommunications, digital set top boxes, audio
recording, and digital imaging.
By applying FlashFile memory family pinouts, Intel StrataFlash memory components allow easy design
migrations from existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation
Intel StrataFlash memory (28F640J5 and 28F320J5) devices.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel
0.25 micron ETOX VI process technology, Intel StrataFlash memory provides
the highest levels of quality and reliability.
I
High-Density Symmetrically-Blocked
Architecture
—128 128-Kbyte Erase Blocks (128 M)
—
6
4 128-Kbyte Erase Blocks (64 M)
—32 128-Kbyte Erase Blocks (32 M)
I
High Performance Interface Asynchronous
Page-Mode Reads
—100/25 ns Read Access Time (32 M)
—120/25 ns Read Access Time (64 M)
—150/25 ns Read Access Time (128 M)
I
2.7 V–3.6 V V
Operation
—2.7 V– 3.6 V and 5 V I/O Capable
I
128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
I
Enhanced Data Protection Features
Absolute Protection with V
PEN
= GND
—Flexible Block Locking
—Block Erase/Program Lockout during
Power Transitions
I
Packaging
—56-Lead TSOP Package
—64-Ball Intel
Easy BGA Package
I
Cross-Compatible Command Support Intel
Basic Command Set
—Common Flash Interface
—Scaleable Command Set
I
32-Byte Write Buffer
—6 μs per Byte Effective Programming
Time
I
12,800,000 Total Erase Cycles (128 M)
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
—100,000 Erase Cycles per Block
I
Automation Suspend Options
—Block Erase Suspend to Read
—Block Erase Suspend to Program
—Program Suspend to Read
I
0.25 μ Intel
StrataFlash Memory
Technology
Order Number: 290667-001
July 1999
NOTICE: This datasheet contains information on products in the design phase of development. Do not finalize a design with
this information. Revised information will be published when the product becomes available. Verify with your local Intel Sales
office that you have the latest datasheet before finalizing a design
.
相關(guān)PDF資料
PDF描述
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
28F640J3A 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲(chǔ)器)
28F128 3 Volt Intel StrataFlash Memory
28F1602C3 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
28F3204C3 3 V Advanced+ Stacked Chip Scale Package Memory(3V高級(jí)堆芯片封裝存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F128J3A150 制造商: 功能描述: 制造商:INTELC 功能描述: 制造商:undefined 功能描述:
28F128J3A-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F128J3D75 制造商: 功能描述: 制造商:Intel 功能描述:
28F128J3FS-12ET 制造商: 功能描述: 制造商:undefined 功能描述:
28F128L18 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
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