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參數資料
| 型號： | 28F640J5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V Intel StrataFlash Memory(5V 64M位英特爾StrataFlash閃速存儲器) |
| 中文描述： | 5伏特英特爾StrataFlash存儲器（5V的6400位英特爾的StrataFlash閃速存儲器） |
| 文件頁數： | 1/53頁 |
| 文件大小： | 272K |
| 代理商： | 28F640J5 |
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E
PRELIMINARY
May 1999
Order Number: 290606-008
n
High-Density Symmetrically-Blocked
Architecture
64 128-Kbyte Erase Blocks (64 M)
32 128-Kbyte Erase Blocks (32 M)
n
4.5 V
–5.5 V V
CC
Operation
2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
n
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
n
Enhanced Data Protection Features
Absolute Protection with
V
PEN
= GND
Flexible Block Locking
Block Erase/Program Lockout
during Power Transitions
n
Industry-Standard Packaging
SSOP Package (32, 64 M)
TSOP Package (32 M)
μBGA* Package (64 M)
n
Cross-Compatible Command Support
Intel Basic Command Set
Common Flash Interface
Scaleable Command Set
n
32-Byte Write Buffer
6 μs per Byte Effective
Programming Time
n
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
100,000 Erase Cycles per Block
n
Automation Suspend Options
Block Erase Suspend to Read
Block Erase Suspend to Program
n
System Performance Enhancements
STS Status Output
Capitalizing on two-bit-per-cell technology, 5 Volt Intel
StrataFlash memory products provide 2X the bits in
1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory
devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and the Scaleable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX V process technology, 5 Volt Intel StrataFlash memory provides
the highest levels of quality and reliability.
NOTE:
This document formerly known as
Intel
StrataFlash Memory Technology 32 and 64 Mbit
.
5 VOLT INTEL StrataFlash MEMORY
28F320J5 and 28F640J5 (x8/x16)
相關PDF資料 |
PDF描述 |
|---|---|
| 28F400B3 | SMART 3 ADVANCED BOOT BLOCK WORD-WIDE |
| 28F400BL-TB | 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BV-TB | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BX-TB | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F410-100M1 | 4M-BIT (512K X 8) CMOS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28F640L18 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory |
| 28F640L30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30) |
| 28F640P3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| 28F640W30 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F650 | 制造商:Cinch Connectors 功能描述:1 Lug Terminal Strip |
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