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參數資料
| 型號： | 28LV010RT1DB-25 |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | PROM |
| 英文描述： | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 128K X 8 EEPROM 3V, 250 ns, DIP32 |
| 封裝： | DIP-32 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 363K |
| 代理商： | 28LV010RT1DB-25 |
1
M
Alldatasheetsaresubjecttochangewithoutnotice
(858)503-3300-Fax:(858) 503-3301-wwwmaxwell.com
3.3V 1Megabit(128K x8-Bit)
28LV010
2001MaxwellTechnologies
Allrightsreserved.
EEPROM
03.14.03REV 6
F
EATURES
:
3.3V lowvoltageoperation128K x8BitEEPROM
R
AD
-P
AK
radiation-hardenedagainstnaturalspace
radiation
Totaldosehardness:
->100krad(Si), dependinguponspacemssion
ExcellentSingleEventEffects:
-SEL
TH
>84MeV/mg/cm
2
-SEU
TH
>37Mev/mg/cm
2
(readmode)
-SEUsaturatedcrosssection=3E-6cm
2
(readmode)
-SEU
TH
=11.4Mev/mg/cm
2
(writemode)
-SEUsaturatedcrosssection=5E-3cm
2
(writemode)
withharderrors
Package:
-32PinR
AD
-P
AK
flatpack
-32PinR
AD
-P
AK
DIP
-JEDEC-approvedbyte-widepinout
AddressAccessTime:
-200, 250nsmaximumaccesstimesavailable
Highendurance:
-10,000erase/write(inPageMode), 10-yeardata
retention
Pagewritemode:
-1to128bytes
Automaticprogrammng
-10msautomaticpage/bytewrite
Lowpowerdissipation
-20mW/MHzactivecurrent(typ.)
-72μWstandby(maximum
D
ESCRIPTION
:
MaxwellTechnologies’ 28LV010highdensity, 3.3V, 1Megabit
EEPROMmcrocircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mssion. The
28LV010iscapableofin-systemelectricalByteandPagepro-
grammability.Ithasa128-BytePageProgrammngfunctionto
make its erase and write operations faster. It also features
DataPollingandaReady/Busysignaltoindicatethecomple-
tion of erase and programmng operations. In the 28LV010,
hardwaredataprotectionisprovidedwiththeRES pin,inaddi-
tiontonoise protectiononthe WE signal andwrite inhibiton
power on and off. Meanwhile, software data protection is
implemented using the JEDEC-optional Standard algorithm
The 28LV010 is designed for high reliability in the most
demandingspaceapplications.
MaxwellTechnologies'patentedR
AD
-P
AK
packagingtechnol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the needforbox shielding while providing
therequiredradiationshielding fora lifetimeinorbitorspace
mssion. Ina GEO orbit, R
AD
-P
AK
provides greaterthan100
krad (Si) radiation dose tolerance. This product is available
withscreeninguptoClassS.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| 28LV010RT1DB20 | CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RT1DB25 | Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance:+/- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes |
| 28LV010RT1DE-20 | CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, +:10%; Tolerance, -:10%; Temp, op. max:125(degree C); |
| 28LV010RPDB-20 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RPDB-25 | 3.3V 1 Megabit (128K x 8-Bit) EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 28LV010RT1DE20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE-20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DE-25 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
| 28LV010RT1DI20 | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:3.3V 1 Megabit (128K x 8-Bit) EEPROM |
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