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參數(shù)資料
| 型號(hào)： | 29F080-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 800萬(wàn)位[1024K × 8]的CMOS平等部門閃存 |
| 文件頁(yè)數(shù)： | 1/38頁(yè) |
| 文件大?。?/td> | 678K |
| 代理商： | 29F080-90 |
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1
P/N:PM0579
REV. 1.6, NOV, 21, 2002
MX29F080
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY
PRELIMINARY
FEATURES
1,048,576 x 8 byte mode only
Single power supply operation
- 5.0V only operation for read, erase and program
operation
Fast access time: 70/90/120ns
Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte Programming (7us typical)
- Sector Erase of 16 equal sector with 64K-Byte each
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, another sector that is not being
erased, then resumes the erase.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 10,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and program
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and programming operations produces reliable
cycling. The MX29F080 uses a 5.0V±10% VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
GENERAL DESCRIPTION
The MX29F080 is a 8-mega bit Flash memory organized
as 1024K bytes of 8 bits. MXIC's Flash memories offer
the most cost-effective and reliable read/write non-vola-
tile random access memory. The MX29F080 is pack-
aged in 40-pin TSOP or 44-pin SOP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29F080 offers access time as fast as
70ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F080 has separate chip enable (CE) and output
enable (OE ) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F080 uses a command register to manage this
functionality. The command register allows for 100%
Status Reply
- Data polling & Toggle bit for detection of program
and erase operation completion.
Ready/Busy (RY/BY)
- Provides a hardware method of detecting program
and erase operation completion.
Sector Group protect/chip unprotect for 5V/12V sys-
tem.
Sector Group protection
- Hardware protect method for each group which con-
sists of two adjacent sectors
- Temporary sector group unprotect allows code
changes in previously locked sectors
10,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Low VCC write inhibit is equal to or less than 3.2V
Package type:
- 40-pin TSOP or 44-pin SOP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
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