- 您現在的位置：買賣IC網 > PDF目錄371440 > 29LV160C-90 (Macronix International Co., Ltd.) 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY PDF資料下載
參數資料
| 型號： | 29LV160C-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 1,600位[2Mx8/1Mx16] CMOS單電壓3V時僅閃存 |
| 文件頁數： | 1/66頁 |
| 文件大?。?/td> | 778K |
| 代理商： | 29LV160C-90 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
1
P/N:PM1186
REV. 1.2, JAN. 19, 2006
MX29LV160C T/B
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 1.4V
Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
-
All Pb-free devices are RoHS Compliant
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
10 years data retention
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
2,097,152 x 8/1,048,576 x 16 switchable
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fully compatible with MX29LV160B device
Fast access time: 55R/70/90ns
Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase Suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
GENERAL DESCRIPTION
The MX29LV160C T/B is a 16-mega bit Flash memory
organized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV160C T/B is packaged in 44-pin
SOP, 48-pin TSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV160C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV160C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV160C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV160C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
相關PDF資料 |
PDF描述 |
|---|---|
| 29LV320BTC-70 | 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV400C-55R | 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV400C-70 | 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV400C-90 | 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV650 | 64M (4M x 16) BIT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 29LV160DB70EC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29LV160DB-70EC | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29LV160DB70EI | 制造商:Advanced Micro Devices 功能描述: |
| 29LV160DB70SI | 制造商: 功能描述: |
| 29LV160DB-70SI | 制造商: 功能描述: 制造商:undefined 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。