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參數資料
| 型號： | 2A06 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2.0A RECTIFIER |
| 中文描述： | 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 57K |
| 代理商： | 2A06 |
DS29008 Rev. B-2
1 of 2
2A01-2A07
2A01 - 2A07
2.0A RECTIFIER
Features
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 70A Peak
Plastic Material - UL Flammability
Classification 94V-0
A
A
B
C
D
DO-15
Min
Dim
A
B
C
D
Max
25.40
—
5.50
7.62
0.686
0.889
2.60
3.6
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.4 grams (approx)
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
2A01
2A02
2A03
2A04
2A05
2A06
2A07
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
@ T
A
= 55°C
I
O
2.0
A
I
FSM
70
A
@ I
F
= 2.0A
@T
= 25°C
@ TA = 100°C
V
FM
1.1
5.0
50
V
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
I
RM
μA
I
2
t
C
j
17.5
15
60
A
2
s
pF
K/W
R
JA
T
j,
T
STG
-65 to +150
°C
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
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| 2A03 | 2.0 AMPS. SILICON RECTIFIERS |
| 2A04 | 2.0 AMPS. SILICON RECTIFIERS |
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