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參數(shù)資料
| 型號： | 2C3767 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | CHIP |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 4A條一（c）|芯片 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 34K |
| 代理商： | 2C3767 |
Chip Type 2C3762
Geometry 6706
Polarity PNP
Data S heet No. 2C3762
Generic Packaged Parts:
2N3467, 2N3467L, 2N3468,
2N3468L, 2N3762, 2N3762L,
2N3763, 2N3763L, 2N3764, 2N3765
Chip type
2C3762
by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
APPLICATIONS:
Designed for general
purpose switching and amplifier applica-
tions.
Part Numbers:
2N3467, 2N3467L, 2N3468, 2N3468L,
2N3762, 2N3762L, 2N3763, 2N3763L,
2N3764, 2N3765
Features:
Radiation graphs available
Top
Al - 20 k min.
Au - 6.5 k nom.
5.0 mils x 5.0 mils
5.0 mils x 5.0 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
30 mils x 30 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
Parameter
BV
CBO
BV
EBO
I
CBO
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 100 μA, I
E
= 0
I
E
= 100 μA, I
C
= 0
V
CB
= 40 V, I
E
= 0
I
C
= 150 mA dc, V
CE
= 10 V
Min
140
7.0
---
100
Max
---
---
10
300
Unit
V dc
V dc
nA
---
Electrical Characteristics
T
A
= 25
o
C
3
30 MILS
B
E
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