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參數資料
| 型號： | 2C4261 |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Chip Type 2C4261 Geometry 0014 Polarity PNP |
| 中文描述： | 片式2C4261幾何0014極性進步黨 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 29K |
| 代理商： | 2C4261 |
Chip Type 2C4261
Geometry 0014
Polarity PNP
Data S heet No. 2C4261
Generic Packaged Parts:
2N4260, 2N4261
Chip type
2C4261
by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
APPLICATIONS:
Designed for low voltage, low gain RF
amplifier applications.
Part Numbers:
2N4261
, 2N4261UB, 2N4260, 2N4260UB,
SD4261, SD4261F, SQ4261, SQ4261F
Features:
Special Characteristics
ft = 1.8 GHz (typ) at 10 mA/10V
Top
Al - 12 k min.
Au - 6.5 k nom.
2.1 mils x 2.1 mils
2.1 mils x 2.1 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
16 mils x 16 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
Parameter
BV
CEO
BV
CBO
BV
EBO
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10.0 mA, I
B
= 0
I
C
= 10 μA, I
E
= 0
I
E
= 10 μA, I
C
= 0
I
C
= 10 mA dc, V
CE
= 1.0 V dc
Min
15
15
4.5
30
Max
---
---
---
150
Unit
V dc
V dc
V dc
---
Electrical Characteristics
T
A
= 25
o
C
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