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參數(shù)資料
| 型號： | 2DC4617R-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, ULTRA MINIATURE, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 344K |
| 代理商： | 2DC4617R-7-F |
Lead-free
DS30252 Rev. 8 - 2
1 of 3
2DC4617Q/R/S
www.diodes.com
Diodes Incorporated
2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·
Ultra Miniature Surface Mount Package
Complementary PNP Type Available (2DA1774Q,R,S)
Lead Free/RoHS Compliant (Note 3)
·
·
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
50
7.0
150
Unit
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
A
M
J
L
D
B
N
C
H
K
G
C
E
B
Mechanical Data
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin annealed over Alloy 42
leadframe).
Marking (See Last Page): 2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
Ordering Information: See Last Page
Weight: 0.002 grams (approximate)
·
·
·
·
·
·
·
·
Notes:
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
60
50
7.0
V
V
V
nA
nA
I
C
= 50
m
A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 50
m
A, I
C
= 0
V
CB
= 60V
V
EB
= 7.0V
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain 2DC4617Q
2DC4617R
2DC4617S
h
FE
120
180
270
270
390
560
V
CE
= 6.0V, I
C
= 1.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.4
V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
C
obo
f
T
2.0
180
3.5
pF
MHz
V
CB
= 12V, f = 1.0MHz, I
E
= 0
V
CE
= 12V, I
E
= -2mA, f = 1MHz
SOT-523
Min
Dim
A
B
C
D
G
H
J
K
L
M
N
Max
Typ
0.15
0.30
0.22
0.75
0.85
0.80
1.45
1.75
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.00
0.10
0.05
0.60
0.80
0.75
0.10
0.30
0.22
0.10
0.20
0.12
0.45
0.65
0.50
a
0
°
8
°
All Dimensions in mm
Features
Characteristic
Symbol
P
d
R
q
JA
T
j
, T
STG
Value
150
833
-55 to +150
Unit
mW
Power Dissipation (Note 1) @ T
A
= 25
°
C
Thermal Resistance, Junction to Ambient (Note 1) @ T
A
= 25
°
C
Operating and Storage and Temperature Range
°
C/W
°
C
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Thermal Characteristics
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| 2DC4617S | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 2DC4617S-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2DC4617S-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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