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參數資料
| 型號： | 2DC4617R |
| 廠商： | Diodes Inc. |
| 英文描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | npn型小信號晶體管表面貼裝 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | 2DC4617R |
DS30252 Rev. 4 - 2
1 of 2
2DC4617Q/R/S
2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Ultra Miniature Surface Mount Package
Complementary PNP Type Available
(2DA1774Q,R,S)
Mechanical Data
Case: SOT-523, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See diagram
Marking (See Page 2): 2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
Ordering & Date Code Information: See Page 2
Weight: 0.002 grams (approx.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
JA
T
j
, T
STG
2DC4617Q/R/S
60
50
7.0
150
150
833
-55 to +150
Unit
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
C/W
C
Features
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
A
M
J
L
D
B
N
C
H
K
G
TOP VIEW
C
E
B
Notes:
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
60
50
7.0
V
V
V
nA
nA
I
C
= 50 A, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 50 A, I
C
= 0
V
CB
= 60V
V
EB
= 7.0V
100
100
ON CHARACTERISTICS (Note 2)
DC Current Gain 2DC4617Q
2DC4617R
2DC4617S
Collector-Emitter Saturation Voltage
h
FE
120
180
270
270
390
560
0.4
V
CE
= 6.0V, I
C
= 1.0mA
V
CE(SAT)
V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
C
obo
f
T
2.0 Typ.
180 Typ.
3.5
pF
MHz
V
CB
= 12V, f = 1.0MHz, I
E
= 0
V
CE
= 12V, I
E
= -2mA, f = 1MHz
T
C
U
D
O
R
P
W
E
N
SOT-523
Min
Dim
A
B
C
D
G
H
J
K
L
M
N
Max
Typ
0.15
0.30
0.22
0.75
0.85
0.80
1.45
1.75
1.60
0.50
0.90
1.10
1.00
1.50
1.70
1.60
0.00
0.10
0.05
0.60
0.80
0.75
0.10
0.30
0.22
0.10
0.20
0.12
0.45
0.65
0.50
0
8
All Dimensions in mm
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相關代理商/技術參數 |
參數描述 |
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| 2DC4617R-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2DC4617R-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2DC4617S | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 2DC4617S-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2DC4617S-7-F | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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