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參數(shù)資料
| 型號(hào)： | 2MBI75UA-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | M232, 7 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 101K |
| 代理商： | 2MBI75UA-120 |
2MBI75UA-120
1200V / 75A 2 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
V F
(terminal)
V F
(chip)
trr
R lead
–
1.0
–
200
4.5
6.5
8.5
–
1.9
2.25
–
2.15
–
1.75
2.10
–
2.00
–
–8
–
0.36
1.20
–
0.21
0.60
–
0.03
–
0.37
1.00
–
0.07
0.30
–
1.75
2.05
–
1.85
–
1.60
1.90
–
1.70
–
0.35
–
1.39
–
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=75A
VGE=±15V
RG=9.1
VGE=0V
IF=75A
mA
nA
V
nF
s
V
s
m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance
Contact Thermal resistance
–
0.31
–
0.48
–
0.05
–
IGBT
FWD
With thermal compound
°C/W
Equivalent Circuit Schematic
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 Nm(M5)
Symbols
Conditions
Characteristics
Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(c-f)*4
IGBT Module U-Series
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
C1
G1 E1
G2 E2
C2E1
E2
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*3:Biggest internal terminal resistance among arm.
Items
Symbols
Conditions
Characteristics
Unit
Min.
Typ.
Max.
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltaga
VGES
Collector current
IC
ICp
-IC
-IC pulse
Collector Power Dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1
Viso
Screw Torque
Mounting *2
Terminals *2
Rating
1200
±20
100
75
200
150
75
150
400
+150
-40 to +125
2500
3.5
Unit
V
A
W
°C
VAC
Nm
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
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