
2MP03SF
No.8379-1/4
Features
High fT : fT=230MHz (typ).
Small reverse transfer capacitance : Cre=0.9pF (typ).
Low NF : (2.5dB typ)
Small package permitting 2MP03SF applied sets to made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
V
Collector-to-Emitter Voltage
VCEO
--20
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--30
mA
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8mm)
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--10V, IE=0A
--0.1
A
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--0.1
A
DC Current Gain
hFE
VCE=--6V, IC=--1mA
60
200
Gain-Bandwidth Product
fT
VCE=--6V, IC=--1mA
150
230
MHz
Reverse Transfer Capacitance
Cre
VCB=--6V, IC=1MHz
0.9
1.7
pF
Noise Figure
NF
VCE=--6V, IC=--1mA, f=100MHz
2.5
dB
Marking : WC
Ordering number : EN8379A
72606 / 32406 MS IM TB-00002140 / 70505AA MS IM TB-00001576
2MP03SF
PNP Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
SANYO Semiconductors
DATA SHEET
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Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.