- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371448 > 2N1131 (MICROSEMI CORP-LAWRENCE) LOW POWER PNP SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2N1131 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | LOW POWER PNP SILICON TRANSISTOR |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2N1131 |
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 177
Devices
Qualified Level
2N1131
2N1131L
2N1132
2N1132L
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
All Units
40
50
5.0
600
0.6
2.0
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
W
W
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
1) Derate linearly 3.4 mW/
0
C for T
A
≥
+25
0
C
2)
Derate linearly 11.4 mW/
0
C for T
C
≥
+25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
op
,
T
j
TO-39*
2N1131, 2N1132
TO-5*
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 10
μ
Adc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc, R
BE
≤
10 ohms
Collector-Base Cutoff Current
V
CB
= 50 Vdc
V
CB
= 30 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)CEO
40
Vdc
V
(BR)CBO
50
Vdc
I
EBO
100
μ
Adc
I
CER
10
mAdc
I
CBO
10
1.0
μ
Adc
120101
Page 1 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N1131L | LOW POWER PNP SILICON TRANSISTOR |
| 2N1132 | LOW POWER PNP SILICON TRANSISTOR |
| 2N1132L | LOW POWER PNP SILICON TRANSISTOR |
| 2N1188 | 5-Pin, Multiple-Input, Programmable Reset ICs |
| 2N2042 | TRANSISTOR | BJT | PNP | 105V V(BR)CEO | 200MA I(C) | TO-5 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N1131 JAN | 制造商:MISCELLANEOUS MANUFACTURERS 功能描述:SEMICONDUCTOR TRANSISTOR |
| 2N1131A | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N1131B | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 晶體管類型:- 不同?Ib，Ic 時的?Vce 飽和值（最大值）:- 電流 - 集電極截止（最大值）:- 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:- 頻率 - 躍遷:- 工作溫度:- 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應(yīng)商器件封裝:TO-39 標(biāo)準(zhǔn)包裝:500 |
| 2N1131J | 制造商:RAYTHEON 制造商全稱:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N1131L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 0.6A 3PIN TO-5 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。