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參數資料
型號: 2N1890S
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 小信號晶體管
英文描述: 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
文件頁數: 1/3頁
文件大小: 55K
代理商: 2N1890S
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
Qualified Level
2N1711
2N1890
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
2N1711
2N1890
Unit
Collector-Base Voltage
VCBO
75
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current
IC
500
mAdc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
0.8
3.0
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Impedance
ZθJX
58
0C/W
1) Derate linearly 4.57 mW/
0C for TA > 250C
2) Derate linearly 17.2 mW/
0C for TC > 250C
TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 Adc
2N1711, S
2N1890, S
V(BR)CBO
75
100
Vdc
Collector-Emitter Breakdown Voltage
RBE = 10 , IC = 100 mAdc
2N1711, S
2N1890, S
V(BR)CER
50
80
Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
2N1711, S
2N1890, S
V(BR)CEO
30
60
Vdc
Emitter-Base Breakdown Voltage
IE = 100 Adc
V(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc
2N1711
VCB = 80 Vdc
2N1890
ICBO
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
5.0
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
相關PDF資料
PDF描述
2N1711 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N1890 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N1893 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N1908 20 A, 50 V, PNP, Ge, POWER TRANSISTOR, TO-3
2N1925 500 mA, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
相關代理商/技術參數
參數描述
2N1891 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-5
2N1892 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 300MA I(C) | TO-5
2N1893 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N1893 WAF 制造商:ON Semiconductor 功能描述:
2N1893 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-39
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