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參數資料
| 型號： | 2N2219A |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Chip Type 2C2222A Geometry 0400 Polarity NPN |
| 中文描述： | 片式2C2222A幾何0400極性npn型 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N2219A |
2N2219
Bipolar NPN Device.
V
CEO
= 30V
I
C
= 0.8A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
30
V
I
C(CONT)
0.8
A
h
FE
@ 10/0.15 (V
CE
/ I
C
)
100
300
-
f
t
250M
Hz
P
D
0.8
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
(0.89
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
(2.54
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
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| 2N2219AL | Type 2N2219AL Geometry 0400 Polarity NPN |
| 2N2219 | Chip Type 2C2222A Geometry 0400 Polarity NPN |
| 2N2221-2N2222 | HIGH-SPEED SWITCHES |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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