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參數資料
| 型號： | 2N2221A |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN SILICON PLANAR TRANSISTORS |
| 中文描述： | NPN硅平面型晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 53K |
| 代理商： | 2N2221A |
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A
2N2222A
TO-18
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2221A,22A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
40
75
6.0
800
500
2.28
1.2
6.85
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
deg C
Tj, Tstg
-65 to +200
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN
40
75
6.0
-
MAX
-
-
-
10
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
Ta=150 deg C
VCB=60V, IE=0
VCE=60V, VEB=3V
VEB=3V, IC=0
VCE=60V, VEB=3V
-
-
-
-
-
10
10
10
20
0.3
1.0
uA
nA
nA
nA
V
V
V
V
ICEX
IEBO
IBL
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
0.6-1.2
2.0
Continental Device India Limited
Page 1 of 3
http://www.bocasemi.com page : 1
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2221A_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RADIATION HARDENED |
| 2N2221A_2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON SWITCHING TRANSISTOR |
| 2N2221ADCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| 2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| 2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
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