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參數資料
| 型號： | 2N2222 |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N2222 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 3/00
LA B
S E M E
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
SPACE QUALITY LEVELS OPTIONS
HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
ja
T
stg,Tj
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
B
= 0)
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Storage Temperature,Operating Temp Range
75V
40V
6V
600mA
350mW
2.0mW / °C
350°C/W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
SOT23 CERAMIC
(LCC1 PACKAGE)
相關PDF資料 |
PDF描述 |
|---|---|
| 2N2222A | NPN switching transistors |
| 2N2222A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N2222ACSM | High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關型NPN晶體管（高可靠性、陶瓷表貼封裝）) |
| 2N2222 | HIGH-SPEED SWITCHES |
| 2N2222 | NPN Silicon Planar Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2222/A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Switching Transistors |
| 2N2222A | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2222A LEAD | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN 40V 3-Pin TO-18 Box 制造商:Central Semiconductor 功能描述:Trans GP BJT NPN 40V 3-Pin TO-18 Box |
| 2N2222A (MC) | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-18 |
| 2N2222A JAN | 制造商:Microsemi Corporation 功能描述:SEMICONDUCTOR MILITARY TRANSISTOR |
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