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參數資料
| 型號： | 2N2894DCSM |
| 英文描述： | High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關型PNP晶體管（高可靠性、陶瓷表貼封裝）) |
| 中文描述： | 高速中功率開關晶體管進步黨在全封閉六窯業表面貼裝封裝，高可靠性的應用（高速，中等功率，開關型進步黨晶體管（高可靠性，陶瓷表貼封裝）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | 2N2894DCSM |
2N2894DCSM
Prelim. 8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DUAL HIGH SPEED, MEDIUM POWER, PNP
GENERAL PURPOSE TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FEATURES
SILICON PLANAR EPITAXIAL DUAL PNP
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
SCREENING OPTIONS AVAILABLE
HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
Hermetically sealed dual surface mount ver-
sion of the popular 2N2894 for high reliability
applications requiring small size and low
weight devices.
V
CBO
V
CEO
V
EBO
I
C
P
D
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation
@ T
A
=25°C
Derate above 25°C
@ T
C
=25°C
Derate above 25°C
P
D
Total Device Dissipation
T
STG
, T
J
Operating and Storage Temperature Range
-12V
-12V
-4V
200mA
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
5
6
(06.22 ± 0.13
2
(
(01.65 ± 0.13
(2.29 ± 0.20
(1.27 ± 0.13
1.40 ± 0.15
(0.055 ± 0.006)
4
(
0
(
(0.23
rad.
A =
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2894DCSM_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
| 2N2894L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18 |
| 2N2895 | 制造商:motorola 功能描述:DIODE 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2896 | 功能描述:兩極晶體管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2897 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
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