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參數(shù)資料
型號(hào): 2N2904
廠商: Semicoa Semiconductor
英文描述: Chip Type 2C2904A Geometry 0600 Polarity PNP
中文描述: 片式2C2904A幾何0600極性進(jìn)步黨
文件頁數(shù): 1/2頁
文件大小: 18K
代理商: 2N2904
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
2N2904
GENERAL PURPOSE PNP
TRANSISTOR
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
CECC SCREENING OPTIONS
LOW NOISE AMPLIFIER
APPLICATIONS:
GENERAL PURPOSE
HIGH SPEED SATURATED SWITCHING
V
CEO
V
CBO
V
EBO
I
C
P
D
Collector – Emitter Voltage
Collector – Base Voltage
Emmiter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
P
D
T
J
, T
STG
40V
60V
5V
600mA
600mW
3.43mW/ °C
3W
17.2mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
( 00 . 8 9
1 2 . 7 0
( 0 . 5 0 0 )
m i n .
6 . 1 0 ( 0 . 2 4 0 )
6 . 6 0 ( 0 . 2 6 0 )
8 . 8 9 ( 0 . 3 5 )
9 . 4 0 ( 0 . 3 7 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
7 . 7 5 ( 0 . 3 0 5 )
8 . 5 1 ( 0 . 3 3 5 )
d i a .
0 . 6 6 ( 0 . 0 2 6 )
1 . 1 4 ( 0 . 0 4 5 )
0 . 7 1 ( 0 . 0 2 8 )
0 . 8 6 ( 0 . 0 3 4 )
2 . 5 4
( 0 . 1 0 0 )
5 . 0 8 ( 0 . 2 0 0 )
t y p .
4 5 °
1
2
3
相關(guān)PDF資料
PDF描述
2N2904A Chip Type 2C2904A Geometry 0600 Polarity PNP
2N2904AUB Chip Type 2C2904A Geometry 0600 Polarity PNP
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2N2905A High Speed, Saturated Switch PNP Silicon Transistor(高速、飽和開關(guān)型PNP硅晶體管)
2N2905A GENERAL PURPOSE AMPLIFIERS AND SWITCHES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2904 制造商:NTE Electronics 功能描述:SILICON PNP TRANSISTOR
2N2904_09 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR
2N2904_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:PNP SWITCHING SILICON TRANSISTOR
2N2904A 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2904A_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor
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